ND261N26KHPSA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: DIODE GP 2.6KV 260A PB50ND-1
Current - Reverse Leakage @ Vr: 40 mA @ 2600 V
Voltage - DC Reverse (Vr) (Max): 2600 V
Operating Temperature - Junction: -40°C ~ 135°C
Supplier Device Package: BG-PB50ND-1
Current - Average Rectified (Io): 260A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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Technische Details ND261N26KHPSA1 Infineon Technologies
Description: DIODE GP 2.6KV 260A PB50ND-1, Current - Reverse Leakage @ Vr: 40 mA @ 2600 V, Voltage - DC Reverse (Vr) (Max): 2600 V, Operating Temperature - Junction: -40°C ~ 135°C, Supplier Device Package: BG-PB50ND-1, Current - Average Rectified (Io): 260A, Technology: Standard, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Tray.
