NDB5060L onsemi
Hersteller: onsemiDescription: MOSFET N-CH 60V 26A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 13A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 30 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 800+ | 1.80 EUR |
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Technische Details NDB5060L onsemi
Description: MOSFET N-CH 60V 26A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -65°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 26A (Tc), Rds On (Max) @ Id, Vgs: 35mOhm @ 13A, 10V, Power Dissipation (Max): 68W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 30 V.
Weitere Produktangebote NDB5060L nach Preis ab 1.99 EUR bis 4.47 EUR
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NDB5060L | Hersteller : onsemi |
Description: MOSFET N-CH 60V 26A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 13A, 10V Power Dissipation (Max): 68W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 30 V |
auf Bestellung 1053 Stücke: Lieferzeit 10-14 Tag (e) |
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NDB5060L | Hersteller : onsemi / Fairchild |
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NDB5060L | Hersteller : ON Semiconductor |
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NDB5060L | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 60V 26A 3-Pin(2+Tab) D2PAK T/R |
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NDB5060L | Hersteller : ON Semiconductor |
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| NDB5060L | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 26A; Idm: 78A; 68W; D2PAK-3 Mounting: SMD Case: D2PAK-3 Drain-source voltage: 60V Drain current: 26A On-state resistance: 50mΩ Type of transistor: N-MOSFET Power dissipation: 68W Polarisation: unipolar Kind of package: reel; tape Gate charge: 17nC Kind of channel: enhancement Gate-source voltage: ±16V Pulsed drain current: 78A Anzahl je Verpackung: 800 Stücke |
Produkt ist nicht verfügbar |
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| NDB5060L | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 26A; Idm: 78A; 68W; D2PAK-3 Mounting: SMD Case: D2PAK-3 Drain-source voltage: 60V Drain current: 26A On-state resistance: 50mΩ Type of transistor: N-MOSFET Power dissipation: 68W Polarisation: unipolar Kind of package: reel; tape Gate charge: 17nC Kind of channel: enhancement Gate-source voltage: ±16V Pulsed drain current: 78A |
Produkt ist nicht verfügbar |