NDBA100N10BT4H ON Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 264+ | 2.48 EUR |
| 500+ | 2.2 EUR |
| 1000+ | 1.99 EUR |
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Technische Details NDBA100N10BT4H ON Semiconductor
Description: MOSFET N-CH 100V 100A D2PAK, Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, 15V, Supplier Device Package: TO-263 (D2Pak), Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 110W (Tc), Rds On (Max) @ Id, Vgs: 6.9mOhm @ 50A, 15V, Current - Continuous Drain (Id) @ 25°C: 100A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).
Weitere Produktangebote NDBA100N10BT4H nach Preis ab 2.4 EUR bis 2.57 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||
|---|---|---|---|---|---|---|---|
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NDBA100N10BT4H | onsemi |
 Description: MOSFET N-CH 100V 100A D2PAKPackaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Rds On (Max) @ Id, Vgs: 6.9mOhm @ 50A, 15V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V, 15V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 50 V |
auf Bestellung 8520 Stücke: Lieferzeit 10-14 Tag (e) |
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| NDBA100N10BT4H | ONSEMI |
Description: ONSEMI - NDBA100N10BT4H - EACH tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: TBC hazardous: false rohsPhthalatesCompliant: YES usEccn: TBC SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 8765 Stücke: Lieferzeit 14-21 Tag (e) |
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| NDBA100N10BT4H |
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Hersteller: onsemi
Description: MOSFET N-CH 100V 100A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 50A, 15V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 50 V
Description: MOSFET N-CH 100V 100A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 50A, 15V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 50 V
auf Bestellung 8520 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 211+ | 2.57 EUR |
| NDBA100N10BT4H |
|
Hersteller: ONSEMI
Description: ONSEMI - NDBA100N10BT4H - EACH
tariffCode: 85412900
productTraceability: Yes-Date/Lot Code
rohsCompliant: YES
euEccn: TBC
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: TBC
SVHC: No SVHC (14-Jun-2023)
Description: ONSEMI - NDBA100N10BT4H - EACH
tariffCode: 85412900
productTraceability: Yes-Date/Lot Code
rohsCompliant: YES
euEccn: TBC
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: TBC
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 8765 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 800+ | 2.4 EUR |