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NDBA100N10BT4H

NDBA100N10BT4H onsemi

NDBA100N10B_Rev1_Mar2015.pdf Hersteller: onsemi
Description: MOSFET N-CH 100V 100A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 50A, 15V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 50 V
auf Bestellung 8765 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
310+2.33 EUR
Mindestbestellmenge: 310
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Technische Details NDBA100N10BT4H onsemi

Description: MOSFET N-CH 100V 100A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Ta), Rds On (Max) @ Id, Vgs: 6.9mOhm @ 50A, 15V, Power Dissipation (Max): 110W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-263 (D2Pak), Drive Voltage (Max Rds On, Min Rds On): 10V, 15V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 50 V.

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NDBA100N10BT4H Hersteller : ONSEMI ONSM-S-A0000737050-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0 Description: ONSEMI - NDBA100N10BT4H - EACH
tariffCode: 85412900
productTraceability: Yes-Date/Lot Code
rohsCompliant: YES
euEccn: TBC
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: TBC
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 8765 Stücke:
Lieferzeit 14-21 Tag (e)
NDBA100N10BT4H NDBA100N10BT4H Hersteller : ON Semiconductor 11ndba100n10b-d.pdf Trans MOSFET N-CH 100V 100A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
NDBA100N10BT4H NDBA100N10BT4H Hersteller : onsemi NDBA100N10B_Rev1_Mar2015.pdf Description: MOSFET N-CH 100V 100A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 50A, 15V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 50 V
Produkt ist nicht verfügbar
NDBA100N10BT4H NDBA100N10BT4H Hersteller : onsemi NDBA100N10B_D-1022946.pdf MOSFET NCH 100A 100V TO-263
Produkt ist nicht verfügbar