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NDD01N60-1G

NDD01N60-1G onsemi

ndd01n60-d.pdf Hersteller: onsemi
Description: MOSFET N-CH 600V 1.5A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
Rds On (Max) @ Id, Vgs: 8.5Ohm @ 200mA, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 50µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 25 V
auf Bestellung 10766 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1402+0.5 EUR
Mindestbestellmenge: 1402
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Technische Details NDD01N60-1G onsemi

Description: MOSFET N-CH 600V 1.5A IPAK, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc), Rds On (Max) @ Id, Vgs: 8.5Ohm @ 200mA, 10V, Power Dissipation (Max): 46W (Tc), Vgs(th) (Max) @ Id: 3.7V @ 50µA, Supplier Device Package: IPAK, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 25 V.

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NDD01N60-1G Hersteller : ONSEMI ONSM-S-A0016042861-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0 Description: ONSEMI - NDD01N60-1G - NDD01N60-1G, SINGLE MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 10766 Stücke:
Lieferzeit 14-21 Tag (e)
NDD01N60-1G NDD01N60-1G Hersteller : ON Semiconductor 2876ndd01n60-d.pdf Trans MOSFET N-CH 600V 1.5A 3-Pin(3+Tab) IPAK Tube
Produkt ist nicht verfügbar
NDD01N60-1G NDD01N60-1G Hersteller : onsemi ndd01n60-d.pdf Description: MOSFET N-CH 600V 1.5A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
Rds On (Max) @ Id, Vgs: 8.5Ohm @ 200mA, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 50µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 25 V
Produkt ist nicht verfügbar
NDD01N60-1G NDD01N60-1G Hersteller : onsemi NDD01N60_D-2317766.pdf MOSFET NFET DPAK 600V 1.5A 8.5O
Produkt ist nicht verfügbar