NDD01N60-1G ON Semiconductor
| Anzahl | Preis |
|---|---|
| 1441+ | 0.38 EUR |
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Technische Details NDD01N60-1G ON Semiconductor
Description: MOSFET N-CH 600V 1.5A IPAK, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc), Rds On (Max) @ Id, Vgs: 8.5Ohm @ 200mA, 10V, Power Dissipation (Max): 46W (Tc), Vgs(th) (Max) @ Id: 3.7V @ 50µA, Supplier Device Package: IPAK, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 25 V.
Weitere Produktangebote NDD01N60-1G nach Preis ab 0.38 EUR bis 0.46 EUR
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NDD01N60-1G | Hersteller : ON Semiconductor |
 Trans MOSFET N-CH 600V 1.5A 3-Pin(3+Tab) IPAK Tube |
auf Bestellung 6750 Stücke: Lieferzeit 14-21 Tag (e) |
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NDD01N60-1G | Hersteller : onsemi |
Description: MOSFET N-CH 600V 1.5A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc) Rds On (Max) @ Id, Vgs: 8.5Ohm @ 200mA, 10V Power Dissipation (Max): 46W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 50µA Supplier Device Package: IPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 25 V |
auf Bestellung 10766 Stücke: Lieferzeit 10-14 Tag (e) |
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| NDD01N60-1G | Hersteller : ONSEMI |
Description: ONSEMI - NDD01N60-1G - NDD01N60-1G, SINGLE MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 10766 Stücke: Lieferzeit 14-21 Tag (e) |
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NDD01N60-1G | Hersteller : onsemi |
Description: MOSFET N-CH 600V 1.5A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc) Rds On (Max) @ Id, Vgs: 8.5Ohm @ 200mA, 10V Power Dissipation (Max): 46W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 50µA Supplier Device Package: IPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 25 V |
Produkt ist nicht verfügbar |
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NDD01N60-1G | Hersteller : onsemi |
MOSFET NFET DPAK 600V 1.5A 8.5O |
Produkt ist nicht verfügbar |