NDD02N60Z-1G ON Semiconductor
| Anzahl | Preis |
|---|---|
| 971+ | 0.56 EUR |
| 1053+ | 0.51 EUR |
| 10000+ | 0.44 EUR |
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Technische Details NDD02N60Z-1G ON Semiconductor
Description: MOSFET N-CH 600V 2.2A IPAK, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc), Rds On (Max) @ Id, Vgs: 4.8Ohm @ 1A, 10V, Power Dissipation (Max): 57W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 50µA, Supplier Device Package: IPAK, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 10.1 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 274 pF @ 25 V.
Weitere Produktangebote NDD02N60Z-1G nach Preis ab 0.36 EUR bis 0.64 EUR
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NDD02N60Z-1G | ON Semiconductor |
 Trans MOSFET N-CH 600V 2.2A 3-Pin(3+Tab) IPAK Tube |
auf Bestellung 25185 Stücke: Lieferzeit 14-21 Tag (e) |
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NDD02N60Z-1G | ON Semiconductor |
Trans MOSFET N-CH 600V 2.2A 3-Pin(3+Tab) IPAK Tube |
auf Bestellung 326825 Stücke: Lieferzeit 14-21 Tag (e) |
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NDD02N60Z-1G | ON Semiconductor |
Trans MOSFET N-CH 600V 2.2A 3-Pin(3+Tab) IPAK Tube |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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NDD02N60Z-1G | onsemi |
Description: MOSFET N-CH 600V 2.2A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc) Rds On (Max) @ Id, Vgs: 4.8Ohm @ 1A, 10V Power Dissipation (Max): 57W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: IPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 10.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 274 pF @ 25 V |
auf Bestellung 369185 Stücke: Lieferzeit 10-14 Tag (e) |
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NDD02N60Z-1G | ON Semiconductor |
MOSFET NFET IPAK 600V 2.2A 4.8R |
auf Bestellung 1439 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| NDD02N60Z-1G |
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Hersteller: ON Semiconductor
Trans MOSFET N-CH 600V 2.2A 3-Pin(3+Tab) IPAK Tube
Trans MOSFET N-CH 600V 2.2A 3-Pin(3+Tab) IPAK Tube
auf Bestellung 25185 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 971+ | 0.56 EUR |
| 1053+ | 0.51 EUR |
| 10000+ | 0.44 EUR |
| NDD02N60Z-1G |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH 600V 2.2A 3-Pin(3+Tab) IPAK Tube
Trans MOSFET N-CH 600V 2.2A 3-Pin(3+Tab) IPAK Tube
auf Bestellung 326825 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 971+ | 0.56 EUR |
| 1053+ | 0.51 EUR |
| 10000+ | 0.44 EUR |
| 100000+ | 0.36 EUR |
| NDD02N60Z-1G |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH 600V 2.2A 3-Pin(3+Tab) IPAK Tube
Trans MOSFET N-CH 600V 2.2A 3-Pin(3+Tab) IPAK Tube
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 971+ | 0.56 EUR |
| 1053+ | 0.51 EUR |
| NDD02N60Z-1G |
|
Hersteller: onsemi
Description: MOSFET N-CH 600V 2.2A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
Rds On (Max) @ Id, Vgs: 4.8Ohm @ 1A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 274 pF @ 25 V
Description: MOSFET N-CH 600V 2.2A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
Rds On (Max) @ Id, Vgs: 4.8Ohm @ 1A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 274 pF @ 25 V
auf Bestellung 369185 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 699+ | 0.64 EUR |
| NDD02N60Z-1G |
|
Hersteller: ON Semiconductor
MOSFET NFET IPAK 600V 2.2A 4.8R
MOSFET NFET IPAK 600V 2.2A 4.8R
auf Bestellung 1439 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH