NDD02N60ZT4G ON Semiconductor
| Anzahl | Preis |
|---|---|
| 971+ | 0.56 EUR |
| 1053+ | 0.5 EUR |
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Technische Details NDD02N60ZT4G ON Semiconductor
Description: MOSFET N-CH 600V 2.2A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc), Rds On (Max) @ Id, Vgs: 4.8Ohm @ 1A, 10V, Power Dissipation (Max): 57W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 50µA, Supplier Device Package: DPAK, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V.
Weitere Produktangebote NDD02N60ZT4G nach Preis ab 0.43 EUR bis 0.64 EUR
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NDD02N60ZT4G | Hersteller : ON Semiconductor |
 Trans MOSFET N-CH 600V 2.2A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 3767 Stücke: Lieferzeit 14-21 Tag (e) |
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NDD02N60ZT4G | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 600V 2.2A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 47414 Stücke: Lieferzeit 14-21 Tag (e) |
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NDD02N60ZT4G | Hersteller : onsemi |
Description: MOSFET N-CH 600V 2.2A DPAK Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc) Rds On (Max) @ Id, Vgs: 4.8Ohm @ 1A, 10V Power Dissipation (Max): 57W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V |
auf Bestellung 52779 Stücke: Lieferzeit 10-14 Tag (e) |
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| NDD02N60ZT4G | Hersteller : ONSEMI |
Description: ONSEMI - NDD02N60ZT4G - MOSFET,N CH,W DIODE,600V,2.2A,DPAK tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 53629 Stücke: Lieferzeit 14-21 Tag (e) |
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| NDD02N60ZT4G | Hersteller : On Semiconductor |
Trans MOSFET N-CH 600V 2.2A DPAK Група товару: Транзистори Од. вим: шт |
Produkt ist nicht verfügbar |
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NDD02N60ZT4G | Hersteller : onsemi |
Description: MOSFET N-CH 600V 2.2A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc) Rds On (Max) @ Id, Vgs: 4.8Ohm @ 1A, 10V Power Dissipation (Max): 57W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: DPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V |
Produkt ist nicht verfügbar |