NDD02N60ZT4G ON Semiconductor
| Anzahl | Preis |
|---|---|
| 971+ | 0.56 EUR |
| 1053+ | 0.51 EUR |
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Technische Details NDD02N60ZT4G ON Semiconductor
Description: MOSFET N-CH 600V 2.2A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc), Rds On (Max) @ Id, Vgs: 4.8Ohm @ 1A, 10V, Power Dissipation (Max): 57W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 50µA, Supplier Device Package: DPAK, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V.
Weitere Produktangebote NDD02N60ZT4G nach Preis ab 0.44 EUR bis 0.64 EUR
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NDD02N60ZT4G | ON Semiconductor |
 Trans MOSFET N-CH 600V 2.2A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 3767 Stücke: Lieferzeit 14-21 Tag (e) |
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NDD02N60ZT4G | ON Semiconductor |
Trans MOSFET N-CH 600V 2.2A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 47414 Stücke: Lieferzeit 14-21 Tag (e) |
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NDD02N60ZT4G | onsemi |
Description: MOSFET N-CH 600V 2.2A DPAK Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc) Rds On (Max) @ Id, Vgs: 4.8Ohm @ 1A, 10V Power Dissipation (Max): 57W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V |
auf Bestellung 52779 Stücke: Lieferzeit 10-14 Tag (e) |
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| NDD02N60ZT4G |
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Hersteller: ON Semiconductor
Trans MOSFET N-CH 600V 2.2A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH 600V 2.2A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 3767 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 971+ | 0.56 EUR |
| 1053+ | 0.51 EUR |
| NDD02N60ZT4G |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH 600V 2.2A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH 600V 2.2A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 47414 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 971+ | 0.56 EUR |
| 1053+ | 0.51 EUR |
| 10000+ | 0.44 EUR |
| NDD02N60ZT4G |
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Hersteller: onsemi
Description: MOSFET N-CH 600V 2.2A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
Rds On (Max) @ Id, Vgs: 4.8Ohm @ 1A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V
Description: MOSFET N-CH 600V 2.2A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
Rds On (Max) @ Id, Vgs: 4.8Ohm @ 1A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V
auf Bestellung 52779 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 699+ | 0.64 EUR |