NDD03N60Z-1G ON Semiconductor
auf Bestellung 725 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 476+ | 0.33 EUR |
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Technische Details NDD03N60Z-1G ON Semiconductor
Description: MOSFET N-CH 600V 2.6A IPAK, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc), Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.2A, 10V, Power Dissipation (Max): 61W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 50µA, Supplier Device Package: IPAK, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 312 pF @ 25 V.
Weitere Produktangebote NDD03N60Z-1G nach Preis ab 0.33 EUR bis 0.48 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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NDD03N60Z-1G | Hersteller : ON Semiconductor |
 Trans MOSFET N-CH 600V 2.6A 3-Pin(3+Tab) IPAK Tube |
auf Bestellung 725 Stücke: Lieferzeit 14-21 Tag (e) |
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NDD03N60Z-1G | Hersteller : onsemi |
Description: MOSFET N-CH 600V 2.6A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc) Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.2A, 10V Power Dissipation (Max): 61W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: IPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 312 pF @ 25 V |
auf Bestellung 43072 Stücke: Lieferzeit 21-28 Tag (e) |
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| NDD03N60Z-1G | Hersteller : ON Semiconductor |
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auf Bestellung 10 Stücke: Lieferzeit 21-28 Tag (e) |
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| NDD03N60Z-1G | Hersteller : ONSEMI |
Description: ONSEMI - NDD03N60Z-1G - NDD03N60Z-1G, SINGLE MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 43072 Stücke: Lieferzeit 14-21 Tag (e) |
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NDD03N60Z-1G | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 600V 2.6A 3-Pin(3+Tab) IPAK Tube |
Produkt ist nicht verfügbar |
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NDD03N60Z-1G | Hersteller : onsemi |
Description: MOSFET N-CH 600V 2.6A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc) Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.2A, 10V Power Dissipation (Max): 61W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: IPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 312 pF @ 25 V |
Produkt ist nicht verfügbar |