Technische Details NDD03N60Z-1G ON Semiconductor
Description: MOSFET N-CH 600V 2.6A IPAK, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc), Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.2A, 10V, Power Dissipation (Max): 61W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 50µA, Supplier Device Package: IPAK, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 312 pF @ 25 V.
Weitere Produktangebote NDD03N60Z-1G nach Preis ab 0.37 EUR bis 0.55 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||
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NDD03N60Z-1G | ON Semiconductor |
 Trans MOSFET N-CH 600V 2.6A 3-Pin(3+Tab) IPAK Tube |
auf Bestellung 725 Stücke: Lieferzeit 14-21 Tag (e) |
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NDD03N60Z-1G | onsemi |
Description: MOSFET N-CH 600V 2.6A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc) Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.2A, 10V Power Dissipation (Max): 61W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: IPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 312 pF @ 25 V |
auf Bestellung 43072 Stücke: Lieferzeit 10-14 Tag (e) |
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| NDD03N60Z-1G | ONSEMI |
Description: ONSEMI - NDD03N60Z-1G - NDD03N60Z-1G, SINGLE MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 43072 Stücke: Lieferzeit 14-21 Tag (e) |
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| NDD03N60Z-1G | ON Semiconductor |
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auf Bestellung 10 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| NDD03N60Z-1G |
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Hersteller: ON Semiconductor
Trans MOSFET N-CH 600V 2.6A 3-Pin(3+Tab) IPAK Tube
Trans MOSFET N-CH 600V 2.6A 3-Pin(3+Tab) IPAK Tube
auf Bestellung 725 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 476+ | 0.37 EUR |
| NDD03N60Z-1G |
|
Hersteller: onsemi
Description: MOSFET N-CH 600V 2.6A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.2A, 10V
Power Dissipation (Max): 61W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 312 pF @ 25 V
Description: MOSFET N-CH 600V 2.6A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.2A, 10V
Power Dissipation (Max): 61W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 312 pF @ 25 V
auf Bestellung 43072 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1010+ | 0.55 EUR |
| NDD03N60Z-1G |
|
Hersteller: ONSEMI
Description: ONSEMI - NDD03N60Z-1G - NDD03N60Z-1G, SINGLE MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
Description: ONSEMI - NDD03N60Z-1G - NDD03N60Z-1G, SINGLE MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 43072 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1800+ | 0.5 EUR |
| NDD03N60Z-1G |
|
Hersteller: ON Semiconductor
auf Bestellung 10 Stücke:
Lieferzeit 21-28 Tag (e)