NDD03N80Z-1G onsemi
Hersteller: onsemi
Description: MOSFET N-CH 800V 2.9A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1.2A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
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Technische Details NDD03N80Z-1G onsemi
Description: MOSFET N-CH 800V 2.9A IPAK, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.9A (Tc), Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1.2A, 10V, Power Dissipation (Max): 96W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 50µA, Supplier Device Package: IPAK, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V.
Weitere Produktangebote NDD03N80Z-1G
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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NDD03N80Z-1G | ON Semiconductor |
MOSFET NFET DPAK 800V 2.9A 4.5OH |
auf Bestellung 1110 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| NDD03N80Z-1G |
|
Hersteller: ON Semiconductor
MOSFET NFET DPAK 800V 2.9A 4.5OH
MOSFET NFET DPAK 800V 2.9A 4.5OH
auf Bestellung 1110 Stücke:
Lieferzeit 10-14 Tag (e)