Technische Details NDD60N900U1-1G ON Semiconductor
Description: MOSFET N-CH 600V 5.7A IPAK, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc), Rds On (Max) @ Id, Vgs: 900mOhm @ 2.5A, 10V, Power Dissipation (Max): 74W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: IPAK, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 50 V.
Weitere Produktangebote NDD60N900U1-1G
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| NDD60N900U1-1G | Hersteller : ONSEMI |
 Description: ONSEMI - NDD60N900U1-1G - NDD60N900U1-1G, SINGLE MOSFETStariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 29016 Stücke: Lieferzeit 14-21 Tag (e) |
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NDD60N900U1-1G | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 600V 5.7A 3-Pin(3+Tab) IPAK Tube |
Produkt ist nicht verfügbar |
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NDD60N900U1-1G | Hersteller : onsemi |
Description: MOSFET N-CH 600V 5.7A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc) Rds On (Max) @ Id, Vgs: 900mOhm @ 2.5A, 10V Power Dissipation (Max): 74W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: IPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 50 V |
Produkt ist nicht verfügbar |