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NDF08N50ZH

NDF08N50ZH onsemi


ndf08n50z-d.pdf
Hersteller: onsemi
Description: MOSFET N-CH 500V 8.5A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 3.6A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220-2 Full Pack
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1095 pF @ 25 V
auf Bestellung 258340 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
404+1.11 EUR
Mindestbestellmenge: 404
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Technische Details NDF08N50ZH onsemi

Description: MOSFET N-CH 500V 8.5A TO220FP, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc), Rds On (Max) @ Id, Vgs: 850mOhm @ 3.6A, 10V, Power Dissipation (Max): 35W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 100µA, Supplier Device Package: TO-220-2 Full Pack, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1095 pF @ 25 V.

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NDF08N50ZH ON Semiconductor ndf08n50z-d.pdf
auf Bestellung 20 Stücke:
Lieferzeit 21-28 Tag (e)
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NDF08N50ZH ndf08n50z-d.pdf
Hersteller: ON Semiconductor
auf Bestellung 20 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH