Technische Details NDFPD1N150CG ON Semiconductor
Description: MOSFET N-CH 1500V 100MA TO220-3, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100mA (Ta), Rds On (Max) @ Id, Vgs: 150Ohm @ 50mA, 10V, Power Dissipation (Max): 2W (Ta), 20W (Tc), Supplier Device Package: TO-220-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1500 V, Gate Charge (Qg) (Max) @ Vgs: 4.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 80 pF @ 30 V.
Weitere Produktangebote NDFPD1N150CG
| Foto | Bezeichnung | Hersteller | Beschreibung |
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NDFPD1N150CG | onsemi |
 Description: MOSFET N-CH 1500V 100MA TO220-3Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 150Ohm @ 50mA, 10V Power Dissipation (Max): 2W (Ta), 20W (Tc) Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1500 V Gate Charge (Qg) (Max) @ Vgs: 4.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 80 pF @ 30 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
NDFPD1N150CG | ON Semiconductor |
MOSFET N-CH Power MOSFET 1500V 0.1A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NDFPD1N150CG |
|
Hersteller: onsemi
Description: MOSFET N-CH 1500V 100MA TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 150Ohm @ 50mA, 10V
Power Dissipation (Max): 2W (Ta), 20W (Tc)
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 4.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 80 pF @ 30 V
Description: MOSFET N-CH 1500V 100MA TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 150Ohm @ 50mA, 10V
Power Dissipation (Max): 2W (Ta), 20W (Tc)
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 4.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 80 pF @ 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NDFPD1N150CG |
|
Hersteller: ON Semiconductor
MOSFET N-CH Power MOSFET 1500V 0.1A
MOSFET N-CH Power MOSFET 1500V 0.1A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH