| Anzahl | Privatkunde |
|---|---|
| 4+ | 0.8 EUR |
| 100+ | 0.46 EUR |
| 1000+ | 0.14 EUR |
| 3000+ | 0.12 EUR |
| 9000+ | 0.11 EUR |
| 24000+ | 0.1 EUR |
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Lieferzeit:
10-14 Tag (e)
Mindestmenge:
4 Stücke
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Technische Details NDS0610-G onsemi
Description: FET -60V 10.0 MOHM SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 120mA (Ta), Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V, Power Dissipation (Max): 360mW (Ta), Vgs(th) (Max) @ Id: 3.5V @ 1mA, Supplier Device Package: SOT-23-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 79 pF @ 25 V.
Weitere Produktangebote NDS0610-G
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
NDS0610-G | onsemi |
 Description: FET -60V 10.0 MOHM SOT23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 120mA (Ta) Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 3.5V @ 1mA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 79 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
|
NDS0610-G | onsemi |
Description: FET -60V 10.0 MOHM SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 120mA (Ta) Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 3.5V @ 1mA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 79 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NDS0610-G | ON Semiconductor |
Trans MOSFET P-CH 60V 0.12A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| NDS0610-G |
|
Hersteller: onsemi
Description: FET -60V 10.0 MOHM SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 79 pF @ 25 V
Description: FET -60V 10.0 MOHM SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 79 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NDS0610-G |
|
Hersteller: onsemi
Description: FET -60V 10.0 MOHM SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 79 pF @ 25 V
Description: FET -60V 10.0 MOHM SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 79 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NDS0610-G |
|
Hersteller: ON Semiconductor
Trans MOSFET P-CH 60V 0.12A 3-Pin SOT-23 T/R
Trans MOSFET P-CH 60V 0.12A 3-Pin SOT-23 T/R
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH