NDS352AP onsemi
Hersteller: onsemi
Description: MOSFET P-CH 30V 900MA SUPERSOT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 135 pF @ 15 V
| Anzahl | Preis |
|---|---|
| 3000+ | 0.24 EUR |
| 6000+ | 0.22 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NDS352AP onsemi
Description: MOSFET P-CH 30V 900MA SUPERSOT3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 900mA (Ta), Rds On (Max) @ Id, Vgs: 300mOhm @ 1A, 10V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: SOT-23-3, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 135 pF @ 15 V.
Weitere Produktangebote NDS352AP nach Preis ab 0.23 EUR bis 5.11 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
NDS352AP | Hersteller : onsemi / Fairchild |
MOSFETs P-Ch LL FET Enhancement Mode |
auf Bestellung 65508 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
NDS352AP | Hersteller : onsemi |
Description: MOSFET P-CH 30V 900MA SUPERSOT3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 900mA (Ta) Rds On (Max) @ Id, Vgs: 300mOhm @ 1A, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 135 pF @ 15 V |
auf Bestellung 14705 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
NDS352AP | Hersteller : onsemi |
MOSFETs P-Ch LL FET Enhancement Mode |
auf Bestellung 47871 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
NDS352AP | Hersteller : ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -0.9A; 0.5W; SuperSOT-3 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -900mA Power dissipation: 0.5W Case: SuperSOT-3 Gate-source voltage: ±20V On-state resistance: 0.7Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: logic level Gate charge: 3nC |
auf Bestellung 14 Stücke: Lieferzeit 14-21 Tag (e) |
|