NDS356AP onsemi

Description: MOSFET P-CH 30V 1.1A SUPERSOT3, Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: SOT-23-3, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 500mW (Ta), Rds On (Max) @ Id, Vgs: 200mOhm @ 1.3A, 10V, Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).