| Anzahl | Privatkunde |
|---|---|
| 1+ | 53.32 EUR |
| 10+ | 38.91 EUR |
| 120+ | 34.94 EUR |
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Technische Details NDSH50120C-F155 onsemi
Description: SIC DIODE GEN2.0 1200V TO247-2L, Current - Reverse Leakage @ Vr: 200 µA @ 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 50 A, Voltage - DC Reverse (Vr) (Max): 1200 V, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: TO-247-2, Current - Average Rectified (Io): 53A, Capacitance @ Vr, F: 3691pF @ 1V, 100kHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-247-2, Packaging: Tube.
Weitere Produktangebote NDSH50120C-F155 nach Preis ab 33.62 EUR bis 53.76 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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NDSH50120C-F155 | onsemi |
 Description: SIC DIODE GEN2.0 1200V TO247-2LCurrent - Reverse Leakage @ Vr: 200 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 50 A Voltage - DC Reverse (Vr) (Max): 1200 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-247-2 Current - Average Rectified (Io): 53A Capacitance @ Vr, F: 3691pF @ 1V, 100kHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-247-2 Packaging: Tube |
auf Bestellung 1789 Stücke: Lieferzeit 10-14 Tag (e) |
|
| NDSH50120C-F155 |
|
Hersteller: onsemi
Description: SIC DIODE GEN2.0 1200V TO247-2L
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-2
Current - Average Rectified (Io): 53A
Capacitance @ Vr, F: 3691pF @ 1V, 100kHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
Description: SIC DIODE GEN2.0 1200V TO247-2L
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-2
Current - Average Rectified (Io): 53A
Capacitance @ Vr, F: 3691pF @ 1V, 100kHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
auf Bestellung 1789 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 53.76 EUR |
| 10+ | 38.92 EUR |
| 25+ | 35.06 EUR |
| 100+ | 33.62 EUR |