NDSH50120C-F155 onsemi
Hersteller: onsemiDescription: SIC DIODE GEN2.0 1200V TO247-2L
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 3691pF @ 1V, 100kHz
Current - Average Rectified (Io): 53A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 50 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
auf Bestellung 1789 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 45.18 EUR |
| 10+ | 32.71 EUR |
| 25+ | 29.46 EUR |
| 100+ | 28.25 EUR |
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Technische Details NDSH50120C-F155 onsemi
Description: SIC DIODE GEN2.0 1200V TO247-2L, Packaging: Tube, Package / Case: TO-247-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 3691pF @ 1V, 100kHz, Current - Average Rectified (Io): 53A, Supplier Device Package: TO-247-2, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 50 A, Current - Reverse Leakage @ Vr: 200 µA @ 1200 V.
Weitere Produktangebote NDSH50120C-F155 nach Preis ab 31.06 EUR bis 46.11 EUR
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NDSH50120C-F155 | Hersteller : onsemi |
SiC Schottky Diodes SIC DIODE GEN2.0 1200V TO247-2L |
auf Bestellung 441 Stücke: Lieferzeit 10-14 Tag (e) |
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