NDT01N60T1G ON Semiconductor
| Anzahl | Preis |
|---|---|
| 1140+ | 0.48 EUR |
| 10000+ | 0.42 EUR |
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Technische Details NDT01N60T1G ON Semiconductor
Description: MOSFET N-CH 600V 400MA SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 400mA (Tc), Rds On (Max) @ Id, Vgs: 8.5Ohm @ 200mA, 10V, Power Dissipation (Max): 2.5W (Tc), Vgs(th) (Max) @ Id: 3.7V @ 50µA, Supplier Device Package: SOT-223 (TO-261), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 25 V.
Weitere Produktangebote NDT01N60T1G nach Preis ab 0.34 EUR bis 0.6 EUR
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NDT01N60T1G | ON Semiconductor |
 Trans MOSFET N-CH 600V 0.4A 4-Pin(3+Tab) SOT-223 T/R |
auf Bestellung 116000 Stücke: Lieferzeit 14-21 Tag (e) |
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NDT01N60T1G | ON Semiconductor |
Trans MOSFET N-CH 600V 0.4A 4-Pin(3+Tab) SOT-223 T/R |
auf Bestellung 1431 Stücke: Lieferzeit 14-21 Tag (e) |
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NDT01N60T1G | onsemi |
Description: MOSFET N-CH 600V 400MA SOT223 Packaging: Bulk Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 400mA (Tc) Rds On (Max) @ Id, Vgs: 8.5Ohm @ 200mA, 10V Power Dissipation (Max): 2.5W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 50µA Supplier Device Package: SOT-223 (TO-261) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 25 V |
auf Bestellung 137293 Stücke: Lieferzeit 10-14 Tag (e) |
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| NDT01N60T1G |
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Hersteller: ON Semiconductor
Trans MOSFET N-CH 600V 0.4A 4-Pin(3+Tab) SOT-223 T/R
Trans MOSFET N-CH 600V 0.4A 4-Pin(3+Tab) SOT-223 T/R
auf Bestellung 116000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 1140+ | 0.48 EUR |
| 10000+ | 0.42 EUR |
| 100000+ | 0.34 EUR |
| NDT01N60T1G |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH 600V 0.4A 4-Pin(3+Tab) SOT-223 T/R
Trans MOSFET N-CH 600V 0.4A 4-Pin(3+Tab) SOT-223 T/R
auf Bestellung 1431 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 1140+ | 0.48 EUR |
| NDT01N60T1G |
|
Hersteller: onsemi
Description: MOSFET N-CH 600V 400MA SOT223
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Tc)
Rds On (Max) @ Id, Vgs: 8.5Ohm @ 200mA, 10V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 50µA
Supplier Device Package: SOT-223 (TO-261)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 25 V
Description: MOSFET N-CH 600V 400MA SOT223
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Tc)
Rds On (Max) @ Id, Vgs: 8.5Ohm @ 200mA, 10V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 50µA
Supplier Device Package: SOT-223 (TO-261)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 25 V
auf Bestellung 137293 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 757+ | 0.6 EUR |