NDT02N60ZT1G onsemi
Hersteller: onsemi
Description: MOSFET N-CH 600V 300MA SOT223
Current - Continuous Drain (Id) @ 25°C: 300mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: SOT-223 (TO-261)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Power Dissipation (Max): 2W (Tc)
Rds On (Max) @ Id, Vgs: 8Ohm @ 700mA, 10V
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Technische Details NDT02N60ZT1G onsemi
Description: MOSFET N-CH 600V 300MA SOT223, Current - Continuous Drain (Id) @ 25°C: 300mA (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-261-4, TO-261AA, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: SOT-223 (TO-261), Vgs(th) (Max) @ Id: 4.5V @ 50µA, Power Dissipation (Max): 2W (Tc), Rds On (Max) @ Id, Vgs: 8Ohm @ 700mA, 10V.