NE3512S02-T1D-A Renesas Electronics Corporation


RNCCS03623-1.pdf?t.download=true&u=5oefqw
Hersteller: Renesas Electronics Corporation
Description: RF MOSFET HFET 2V S02
Current - Test: 10 mA
Voltage - Test: 2 V
Voltage - Rated: 4 V
Part Status: Obsolete
Supplier Device Package: S02
Noise Figure: 0.35dB
Technology: HFET
Gain: 13.5dB
Frequency: 12GHz
Current Rating (Amps): 70mA
Package / Case: 4-SMD, Flat Leads
Packaging: Bulk
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Technische Details NE3512S02-T1D-A Renesas Electronics Corporation

Description: RF MOSFET HFET 2V S02, Current - Test: 10 mA, Voltage - Test: 2 V, Voltage - Rated: 4 V, Part Status: Obsolete, Supplier Device Package: S02, Noise Figure: 0.35dB, Technology: HFET, Gain: 13.5dB, Frequency: 12GHz, Current Rating (Amps): 70mA, Package / Case: 4-SMD, Flat Leads, Packaging: Bulk.