NE5550779A-T1A-A Renesas Electronics Corporation
Hersteller: Renesas Electronics Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 4-SMD, Flat Leads
Current Rating (Amps): 2.1A
Mounting Type: Surface Mount
Frequency: 900MHz
Power - Output: 38.5dBm
Gain: 22dB
Technology: LDMOS
Supplier Device Package: 79A
Part Status: Active
Voltage - Rated: 30 V
Voltage - Test: 9 V
Current - Test: 140 mA
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Technische Details NE5550779A-T1A-A Renesas Electronics Corporation
Description: N-CHANNEL POWER MOSFET, Packaging: Bulk, Package / Case: 4-SMD, Flat Leads, Current Rating (Amps): 2.1A, Mounting Type: Surface Mount, Frequency: 900MHz, Power - Output: 38.5dBm, Gain: 22dB, Technology: LDMOS, Supplier Device Package: 79A, Part Status: Active, Voltage - Rated: 30 V, Voltage - Test: 9 V, Current - Test: 140 mA.
Weitere Produktangebote NE5550779A-T1A-A nach Preis ab 5.82 EUR bis 7.83 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| NE5550779A-T1A-A | Renesas |
Trans RF MOSFET N-CH 30V 2.1A 4-Pin Case 79A T/R |
auf Bestellung 20035 Stücke: Lieferzeit 14-21 Tag (e) |
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| NE5550779A-T1A-A |
|
Hersteller: Renesas
Trans RF MOSFET N-CH 30V 2.1A 4-Pin Case 79A T/R
Trans RF MOSFET N-CH 30V 2.1A 4-Pin Case 79A T/R
auf Bestellung 20035 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 85+ | 7.83 EUR |
| 100+ | 7.33 EUR |
| 500+ | 6.78 EUR |
| 1000+ | 6.28 EUR |
| 10000+ | 5.82 EUR |