NE58219-T1-A CEL
Hersteller: CEL
Description: NPN SILICON AMPLIFIER AND OSCILL
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Gain: 5dB
Power - Max: 100mW
Current - Collector (Ic) (Max): 60mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
Frequency - Transition: 5GHz
Supplier Device Package: SC-75 (USM)
Part Status: Last Time Buy
Description: NPN SILICON AMPLIFIER AND OSCILL
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Gain: 5dB
Power - Max: 100mW
Current - Collector (Ic) (Max): 60mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
Frequency - Transition: 5GHz
Supplier Device Package: SC-75 (USM)
Part Status: Last Time Buy
auf Bestellung 33000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
13+ | 2.08 EUR |
9000+ | 1.77 EUR |
15000+ | 1.66 EUR |
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Technische Details NE58219-T1-A CEL
Description: NPN SILICON AMPLIFIER AND OSCILL, Packaging: Tape & Reel (TR), Package / Case: SC-75, SOT-416, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 125°C (TJ), Gain: 5dB, Power - Max: 100mW, Current - Collector (Ic) (Max): 60mA, Voltage - Collector Emitter Breakdown (Max): 12V, DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V, Frequency - Transition: 5GHz, Supplier Device Package: SC-75 (USM), Part Status: Last Time Buy.
Weitere Produktangebote NE58219-T1-A
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
NE58219-T1-A | Hersteller : NEC |
auf Bestellung 128820 Stücke: Lieferzeit 21-28 Tag (e) |
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NE58219-T1-A | Hersteller : Renesas | Trans RF BJT NPN 12V 0.06A 3-Pin Ultra Super Mini-Mold T/R |
Produkt ist nicht verfügbar |