NE68119-T1 CEL
Hersteller: CELDescription: RF TRANS NPN 10V 7GHZ 3-MINI
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 10dB ~ 14dB
Power - Max: 100mW
Current - Collector (Ic) (Max): 65mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 7mA, 3V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.4dB ~ 1.8dB @ 1GHz ~ 2GHz
Supplier Device Package: 3-SuperMiniMold (19)
Part Status: Obsolete
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Technische Details NE68119-T1 CEL
Description: RF TRANS NPN 10V 7GHZ 3-MINI, Packaging: Tape & Reel (TR), Package / Case: SOT-523, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Gain: 10dB ~ 14dB, Power - Max: 100mW, Current - Collector (Ic) (Max): 65mA, Voltage - Collector Emitter Breakdown (Max): 10V, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 7mA, 3V, Frequency - Transition: 7GHz, Noise Figure (dB Typ @ f): 1.4dB ~ 1.8dB @ 1GHz ~ 2GHz, Supplier Device Package: 3-SuperMiniMold (19), Part Status: Obsolete.
Weitere Produktangebote NE68119-T1
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NE68119-T1 | Hersteller : CEL |
Description: RF TRANS NPN 10V 7GHZ 3-MINI Packaging: Tape & Reel (TR) Package / Case: SOT-523 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 10dB ~ 14dB Power - Max: 100mW Current - Collector (Ic) (Max): 65mA Voltage - Collector Emitter Breakdown (Max): 10V DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 7mA, 3V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1.4dB ~ 1.8dB @ 1GHz ~ 2GHz Supplier Device Package: 3-SuperMiniMold (19) Part Status: Obsolete |
Produkt ist nicht verfügbar |