NE85639-T1-A CEL
Hersteller: CELDescription: SAME AS 2SC4093 NPN SILICON AMPL
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 13dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Supplier Device Package: SOT-143
Part Status: Obsolete
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 2.82 EUR |
| 9000+ | 2.11 EUR |
| 15000+ | 1.76 EUR |
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Technische Details NE85639-T1-A CEL
Description: SAME AS 2SC4093 NPN SILICON AMPL, Packaging: Tape & Reel (TR), Package / Case: TO-253-4, TO-253AA, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Gain: 13dB, Power - Max: 200mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 12V, DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V, Frequency - Transition: 7GHz, Noise Figure (dB Typ @ f): 1.1dB @ 1GHz, Supplier Device Package: SOT-143, Part Status: Obsolete.
Weitere Produktangebote NE85639-T1-A
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Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
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NE85639-T1-A | Hersteller : CEL |
RF Bipolar Transistors NPN High Frequency |
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