NE85639-T1-A CEL
Hersteller: CELDescription: RF TRANS NPN 12V 9GHZ SOT-143
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 13dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Supplier Device Package: SOT-143
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Technische Details NE85639-T1-A CEL
Description: RF TRANS NPN 12V 9GHZ SOT-143, Packaging: Tape & Reel (TR), Package / Case: TO-253-4, TO-253AA, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Gain: 13dB, Power - Max: 200mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 12V, DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V, Frequency - Transition: 9GHz, Noise Figure (dB Typ @ f): 1.1dB @ 1GHz, Supplier Device Package: SOT-143.
Weitere Produktangebote NE85639-T1-A
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NE85639-T1-A | Hersteller : CEL |
Description: RF TRANS NPN 12V 9GHZ SOT-143 Packaging: Cut Tape (CT) Package / Case: TO-253-4, TO-253AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 13dB Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 12V DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V Frequency - Transition: 9GHz Noise Figure (dB Typ @ f): 1.1dB @ 1GHz Supplier Device Package: SOT-143 |
Produkt ist nicht verfügbar |
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NE85639-T1-A | Hersteller : CEL |
RF Bipolar Transistors NPN High Frequency |
Produkt ist nicht verfügbar |