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NE85639R-T1

NE85639R-T1 CEL


Hersteller: CEL
Description: RF TRANS NPN 12V 9GHZ SOT143R
Packaging: Cut Tape (CT)
Package / Case: SOT-143R
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 13.5dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.5dB ~ 2.1dB @ 1GHz
Supplier Device Package: SOT-143R
Part Status: Obsolete
Produkt ist nicht verfügbar

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Technische Details NE85639R-T1 CEL

Description: RF TRANS NPN 12V 9GHZ SOT143R, Packaging: Tape & Reel (TR), Package / Case: SOT-143R, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Gain: 13.5dB, Power - Max: 200mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 12V, DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V, Frequency - Transition: 9GHz, Noise Figure (dB Typ @ f): 1.5dB ~ 2.1dB @ 1GHz, Supplier Device Package: SOT-143R, Part Status: Obsolete.

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NE85639R-T1 NE85639R-T1 Hersteller : CEL Description: RF TRANS NPN 12V 9GHZ SOT143R
Packaging: Tape & Reel (TR)
Package / Case: SOT-143R
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 13.5dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.5dB ~ 2.1dB @ 1GHz
Supplier Device Package: SOT-143R
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH