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NESG2101M05-A

NESG2101M05-A CEL

NESG2101M05.pdf Hersteller: CEL
Description: RF TRANS NPN 5V 17GHZ M05
Packaging: Bulk
Package / Case: SOT-343F
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 11dB ~ 19dB
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 15mA, 2V
Frequency - Transition: 17GHz
Noise Figure (dB Typ @ f): 0.6dB ~ 1.2dB @ 1GHz ~ 2GHz
Supplier Device Package: M05
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Technische Details NESG2101M05-A CEL

Description: RF TRANS NPN 5V 17GHZ M05, Packaging: Bulk, Package / Case: SOT-343F, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Gain: 11dB ~ 19dB, Power - Max: 500mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 5V, DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 15mA, 2V, Frequency - Transition: 17GHz, Noise Figure (dB Typ @ f): 0.6dB ~ 1.2dB @ 1GHz ~ 2GHz, Supplier Device Package: M05.