NGTB10N60FG ON Semiconductor
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Technische Details NGTB10N60FG ON Semiconductor
Description: IGBT 600V 20A TO-220F-3FS, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 70 ns, Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 10A, Supplier Device Package: TO-220F-3FS, Td (on/off) @ 25°C: 40ns/145ns, Test Condition: 300V, 10A, 30Ohm, 15V, Gate Charge: 55 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 20 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 72 A, Power - Max: 40 W.
Weitere Produktangebote NGTB10N60FG
| Foto | Bezeichnung | Hersteller | Beschreibung |
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NGTB10N60FG | Hersteller : ON Semiconductor |
 Trans IGBT Chip N-CH 600V 20A 40000mW 3-Pin(3+Tab) TO-220F-3FS Tube |
Produkt ist nicht verfügbar |
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NGTB10N60FG | Hersteller : onsemi |
Description: IGBT 600V 20A TO-220F-3FS Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 70 ns Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 10A Supplier Device Package: TO-220F-3FS Td (on/off) @ 25°C: 40ns/145ns Test Condition: 300V, 10A, 30Ohm, 15V Gate Charge: 55 nC Part Status: Obsolete Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 72 A Power - Max: 40 W |
Produkt ist nicht verfügbar |
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| NGTB10N60FG | Hersteller : onsemi |
IGBT Transistors IGBT N-Channel, 600V, 10A, VCE(sat)=1.5V, TO-220F-3FS |
Produkt ist nicht verfügbar |