NGTB15N60EG ON Semiconductor

Description: IGBT NPT 600V 30A TO-220AB, Power - Max: 117 W, Current - Collector Pulsed (Icm): 120 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector (Ic) (Max): 30 A, Part Status: Obsolete, Gate Charge: 80 nC, Test Condition: 400V, 15A, 22Ohm, 15V, Switching Energy: 900µJ (on), 300µJ (off), Td (on/off) @ 25°C: 78ns/130ns, IGBT Type: NPT, Supplier Device Package: TO-220AB, Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 15A, Reverse Recovery Time (trr): 270 ns, Input Type: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.