Technische Details NGTB15N60EG ON Semiconductor
Description: IGBT 600V 30A 117W TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 270 ns, Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 15A, Supplier Device Package: TO-220AB, IGBT Type: NPT, Td (on/off) @ 25°C: 78ns/130ns, Switching Energy: 900µJ (on), 300µJ (off), Test Condition: 400V, 15A, 22Ohm, 15V, Gate Charge: 80 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 30 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 117 W.
Weitere Produktangebote NGTB15N60EG
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
 |
NGTB15N60EG | Hersteller : ON Semiconductor |
 Trans IGBT Chip N-CH 600V 30A 130000mW 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
|
 |
NGTB15N60EG | Hersteller : onsemi |
Description: IGBT 600V 30A 117W TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 270 ns Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 15A Supplier Device Package: TO-220AB IGBT Type: NPT Td (on/off) @ 25°C: 78ns/130ns Switching Energy: 900µJ (on), 300µJ (off) Test Condition: 400V, 15A, 22Ohm, 15V Gate Charge: 80 nC Part Status: Obsolete Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 120 A Power - Max: 117 W |
Produkt ist nicht verfügbar |