NGTB15N60S1EG ON Semiconductor
auf Bestellung 1550 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 266+ | 2.04 EUR |
| 500+ | 1.78 EUR |
| 1000+ | 1.58 EUR |
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Technische Details NGTB15N60S1EG ON Semiconductor
Description: IGBT NPT 600V 30A TO-220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 270 ns, Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 15A, Supplier Device Package: TO-220AB, IGBT Type: NPT, Td (on/off) @ 25°C: 65ns/170ns, Switching Energy: 550µJ (on), 350µJ (off), Test Condition: 400V, 15A, 22Ohm, 15V, Gate Charge: 88 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 30 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 117 W.
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Preis |
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NGTB15N60S1EG | Hersteller : ON Semiconductor |
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NGTB15N60S1EG | Hersteller : onsemi |
Description: IGBT NPT 600V 30A TO-220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 270 ns Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 15A Supplier Device Package: TO-220AB IGBT Type: NPT Td (on/off) @ 25°C: 65ns/170ns Switching Energy: 550µJ (on), 350µJ (off) Test Condition: 400V, 15A, 22Ohm, 15V Gate Charge: 88 nC Part Status: Obsolete Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 120 A Power - Max: 117 W |
Produkt ist nicht verfügbar |
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NGTB15N60S1EG | Hersteller : onsemi |
IGBTs 15A 600V IGBT |
Produkt ist nicht verfügbar |