NGTB20N120IHSWG ON Semiconductor

Description: IGBT 1200V 20A TO247, Power - Max: 156 W, Current - Collector Pulsed (Icm): 120 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 40 A, Part Status: Obsolete, Gate Charge: 155 nC, Test Condition: 600V, 20A, 10Ohm, 15V, Switching Energy: 650µJ (off), Td (on/off) @ 25°C: -/160ns, IGBT Type: Trench Field Stop, Supplier Device Package: TO-247-3, Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A, Input Type: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.