auf Bestellung 279 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 11.46 EUR |
| 10+ | 6.65 EUR |
| 120+ | 5.81 EUR |
| 540+ | 5.03 EUR |
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Technische Details NGTB25N120FL3WG onsemi
Description: IGBT TRENCH FS 1200V 100A TO-247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 114 ns, Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A, Supplier Device Package: TO-247-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 15ns/109ns, Switching Energy: 1mJ (on), 700µJ (off), Test Condition: 600V, 25A, 10Ohm, 15V, Gate Charge: 136 nC, Part Status: Active, Current - Collector (Ic) (Max): 100 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 100 A, Power - Max: 349 W.
Weitere Produktangebote NGTB25N120FL3WG nach Preis ab 4.85 EUR bis 11.49 EUR
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NGTB25N120FL3WG | Hersteller : onsemi |
 Description: IGBT TRENCH FS 1200V 100A TO-247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 114 ns Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 15ns/109ns Switching Energy: 1mJ (on), 700µJ (off) Test Condition: 600V, 25A, 10Ohm, 15V Gate Charge: 136 nC Part Status: Active Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 100 A Power - Max: 349 W |
auf Bestellung 311173 Stücke: Lieferzeit 10-14 Tag (e) |
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NGTB25N120FL3WG | Hersteller : ON Semiconductor |
Trans IGBT Chip N-CH 1200V 100A 349000mW 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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NGTB25N120FL3WG | Hersteller : ON Semiconductor |
Trans IGBT Chip N-CH 1200V 100A 349W 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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NGTB25N120FL3WG | Hersteller : ON Semiconductor |
Trans IGBT Chip N-CH 1200V 100A 349W 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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| NGTB25N120FL3WG | Hersteller : ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 25A; 174W; TO247-3 Type of transistor: IGBT Mounting: THT Kind of package: tube Gate charge: 136nC Gate-emitter voltage: ±20V Collector current: 25A Pulsed collector current: 100A Power dissipation: 174W Collector-emitter voltage: 1.2kV Case: TO247-3 |
Produkt ist nicht verfügbar |