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NGTB25N120LWG

NGTB25N120LWG ON Semiconductor


ngtb25n120l-d.pdf Hersteller: ON Semiconductor
Trans IGBT Chip N-CH 1200V 50A 192000mW 3-Pin(3+Tab) TO-247 Tube
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Technische Details NGTB25N120LWG ON Semiconductor

Description: IGBT 1200V 50A 192W TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 25A, Supplier Device Package: TO-247-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 89ns/235ns, Switching Energy: 3.4mJ (on), 800µJ (off), Test Condition: 600V, 25A, 10Ohm, 15V, Gate Charge: 200 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 50 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 200 A, Power - Max: 192 W.

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NGTB25N120LWG NGTB25N120LWG Hersteller : onsemi NGTB25N120LWG.pdf Description: IGBT 1200V 50A 192W TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 25A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 89ns/235ns
Switching Energy: 3.4mJ (on), 800µJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 200 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 192 W
Produkt ist nicht verfügbar
NGTB25N120LWG NGTB25N120LWG Hersteller : onsemi NGTB25N120L_D-2317965.pdf IGBT Transistors 1200/25A IGBT LPT TO-247
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