Produkte > ONSEMI > NGTB30N120FL2WG
NGTB30N120FL2WG

NGTB30N120FL2WG onsemi


ngtb30n120fl2w-d.pdf Hersteller: onsemi
Description: IGBT TRENCH/FS 1200V 60A TO247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 240 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A
Supplier Device Package: TO-247
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 98ns/210ns
Switching Energy: 2.6mJ (on), 700µJ (off)
Test Condition: 600V, 30A, 10Ohm, 15V
Gate Charge: 220 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 452 W
auf Bestellung 1341 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
58+8.43 EUR
Mindestbestellmenge: 58
Produktrezensionen
Produktbewertung abgeben

Technische Details NGTB30N120FL2WG onsemi

Description: IGBT TRENCH/FS 1200V 60A TO247, Packaging: Bulk, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 240 ns, Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A, Supplier Device Package: TO-247, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 98ns/210ns, Switching Energy: 2.6mJ (on), 700µJ (off), Test Condition: 600V, 30A, 10Ohm, 15V, Gate Charge: 220 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 60 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 452 W.

Weitere Produktangebote NGTB30N120FL2WG nach Preis ab 10.3 EUR bis 14.43 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
NGTB30N120FL2WG NGTB30N120FL2WG Hersteller : onsemi NGTB30N120FL2W_D-2317709.pdf IGBT Transistors 1200V/30A FAST IGBT FSII
auf Bestellung 125 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+14.43 EUR
10+ 12.37 EUR
30+ 11.53 EUR
120+ 10.3 EUR
NGTB30N120FL2WG Hersteller : ONSEMI ONSM-S-A0013669810-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0 Description: ONSEMI - NGTB30N120FL2WG - TRANSISTOR, IGBT, 2V, 60A, TO-247-3
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 2341 Stücke:
Lieferzeit 14-21 Tag (e)
NGTB30N120FL2WG NGTB30N120FL2WG Hersteller : ON Semiconductor ngtb30n120fl2w-d.pdf Trans IGBT Chip N-CH 1200V 60A 452000mW 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
NGTB30N120FL2WG NGTB30N120FL2WG Hersteller : onsemi ngtb30n120fl2w-d.pdf Description: IGBT TRENCH/FS 1200V 60A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 240 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A
Supplier Device Package: TO-247
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 98ns/210ns
Switching Energy: 2.6mJ (on), 700µJ (off)
Test Condition: 600V, 30A, 10Ohm, 15V
Gate Charge: 220 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 452 W
Produkt ist nicht verfügbar