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NGTB30N120LWG

NGTB30N120LWG onsemi

NGTB30N120LWG.pdf Hersteller: onsemi
Description: IGBT 1200V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 30A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 136ns/360ns
Switching Energy: 4.4mJ (on), 1mJ (off)
Test Condition: 600V, 30A, 10Ohm, 15V
Gate Charge: 420 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 560 W
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Technische Details NGTB30N120LWG onsemi

Description: IGBT 1200V 30A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 30A, Supplier Device Package: TO-247-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 136ns/360ns, Switching Energy: 4.4mJ (on), 1mJ (off), Test Condition: 600V, 30A, 10Ohm, 15V, Gate Charge: 420 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 60 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 240 A, Power - Max: 560 W.

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NGTB30N120LWG NGTB30N120LWG Hersteller : onsemi NGTB30N120LWG.pdf Description: IGBT 1200V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 30A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 136ns/360ns
Switching Energy: 4.4mJ (on), 1mJ (off)
Test Condition: 600V, 30A, 10Ohm, 15V
Gate Charge: 420 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 560 W
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NGTB30N120LWG NGTB30N120LWG Hersteller : ON Semiconductor NGTB30N120L_D-1813277.pdf IGBT Transistors IGBT 1200V 30A FS1 Gen Mkt
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