NGTB30N120LWG onsemi
Hersteller: onsemi
Description: IGBT TRENCH FS 1200V 60A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 30A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 136ns/360ns
Switching Energy: 4.4mJ (on), 1mJ (off)
Test Condition: 600V, 30A, 10Ohm, 15V
Gate Charge: 420 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 560 W
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Technische Details NGTB30N120LWG onsemi
Description: IGBT TRENCH FS 1200V 60A TO-247, Power - Max: 560 W, Current - Collector Pulsed (Icm): 240 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 60 A, Part Status: Obsolete, Gate Charge: 420 nC, Test Condition: 600V, 30A, 10Ohm, 15V, Switching Energy: 4.4mJ (on), 1mJ (off), Td (on/off) @ 25°C: 136ns/360ns, IGBT Type: Trench Field Stop, Supplier Device Package: TO-247-3, Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 30A, Input Type: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Weitere Produktangebote NGTB30N120LWG
| Foto | Bezeichnung | Hersteller | Beschreibung |
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NGTB30N120LWG | onsemi |
Description: IGBT TRENCH FS 1200V 60A TO-247 Power - Max: 560 W Current - Collector Pulsed (Icm): 240 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 60 A Part Status: Obsolete Gate Charge: 420 nC Test Condition: 600V, 30A, 10Ohm, 15V Switching Energy: 4.4mJ (on), 1mJ (off) Td (on/off) @ 25°C: 136ns/360ns IGBT Type: Trench Field Stop Supplier Device Package: TO-247-3 Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 30A Input Type: Standard Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
NGTB30N120LWG | ON Semiconductor |
IGBT Transistors IGBT 1200V 30A FS1 Gen Mkt |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NGTB30N120LWG |
|
Hersteller: onsemi
Description: IGBT TRENCH FS 1200V 60A TO-247
Power - Max: 560 W
Current - Collector Pulsed (Icm): 240 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 60 A
Part Status: Obsolete
Gate Charge: 420 nC
Test Condition: 600V, 30A, 10Ohm, 15V
Switching Energy: 4.4mJ (on), 1mJ (off)
Td (on/off) @ 25°C: 136ns/360ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247-3
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 30A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: IGBT TRENCH FS 1200V 60A TO-247
Power - Max: 560 W
Current - Collector Pulsed (Icm): 240 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 60 A
Part Status: Obsolete
Gate Charge: 420 nC
Test Condition: 600V, 30A, 10Ohm, 15V
Switching Energy: 4.4mJ (on), 1mJ (off)
Td (on/off) @ 25°C: 136ns/360ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247-3
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 30A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NGTB30N120LWG |
|
Hersteller: ON Semiconductor
IGBT Transistors IGBT 1200V 30A FS1 Gen Mkt
IGBT Transistors IGBT 1200V 30A FS1 Gen Mkt
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH