NGTB30N140IHR3WG ON Semiconductor
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Technische Details NGTB30N140IHR3WG ON Semiconductor
Description: IGBT TRENCH 1400V 60A TO-247-3, Packaging: Bulk, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 30A, Supplier Device Package: TO-247-3, IGBT Type: Trench, Switching Energy: 1.05mJ (off), Test Condition: 600V, 30A, 10Ohm, 15V, Gate Charge: 163 nC, Current - Collector (Ic) (Max): 60 A, Voltage - Collector Emitter Breakdown (Max): 1400 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 357 W.
Weitere Produktangebote NGTB30N140IHR3WG
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NGTB30N140IHR3WG | Hersteller : onsemi |
 Description: IGBT TRENCH 1400V 60A TO-247-3Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 30A Supplier Device Package: TO-247-3 IGBT Type: Trench Switching Energy: 1.05mJ (off) Test Condition: 600V, 30A, 10Ohm, 15V Gate Charge: 163 nC Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 1400 V Current - Collector Pulsed (Icm): 120 A Power - Max: 357 W |
Produkt ist nicht verfügbar |
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| NGTB30N140IHR3WG | Hersteller : onsemi |
onsemi 1400V, 30A, IGBT with Monolithic Free Wheeling Diode IGBT - 1400 V 30 A |
Produkt ist nicht verfügbar |