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NGTB30N60IHLWG

NGTB30N60IHLWG onsemi


ngtb30n60ihlw-d.pdf Hersteller: onsemi
Description: IGBT TRENCH FS 600V 60A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 400 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 70ns/140ns
Switching Energy: 280µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 130 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 250 W
auf Bestellung 5700 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
136+3.42 EUR
Mindestbestellmenge: 136
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Technische Details NGTB30N60IHLWG onsemi

Description: IGBT TRENCH FS 600V 60A TO-247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 400 ns, Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A, Supplier Device Package: TO-247-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 70ns/140ns, Switching Energy: 280µJ (off), Test Condition: 400V, 30A, 10Ohm, 15V, Gate Charge: 130 nC, Current - Collector (Ic) (Max): 60 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 150 A, Power - Max: 250 W.

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NGTB30N60IHLWG NGTB30N60IHLWG Hersteller : ON Semiconductor NGTB30N60IHLW-D-269758.pdf IGBT Transistors 600V/30A IGBT FS1 IH TO-2
auf Bestellung 195 Stücke:
Lieferzeit 10-14 Tag (e)
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NGTB30N60IHLWG Hersteller : ONSEMI ONSM-S-A0013302320-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0 Description: ONSEMI - NGTB30N60IHLWG - IGBT, 600V, 30A, TO-247-3
tariffCode: 85412900
productTraceability: Yes-Date/Lot Code
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 3720 Stücke:
Lieferzeit 14-21 Tag (e)
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NGTB30N60IHLWG NGTB30N60IHLWG Hersteller : ON Semiconductor ngtb30n60ihlw-d.pdf Trans IGBT Chip N-CH 600V 60A 250000mW 3-Pin(3+Tab) TO-247 Tube
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NGTB30N60IHLWG NGTB30N60IHLWG Hersteller : onsemi ngtb30n60ihlw-d.pdf Description: IGBT TRENCH FS 600V 60A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 400 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 70ns/140ns
Switching Energy: 280µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 130 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 250 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH