NGTB35N65FL2WG ONSEMI
Hersteller: ONSEMICategory: THT IGBT transistors
Description: Transistor: IGBT; 650V; 35A; 150W; TO247-3
Type of transistor: IGBT
Power dissipation: 150W
Case: TO247-3
Mounting: THT
Gate charge: 125nC
Kind of package: tube
Collector current: 35A
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Collector-emitter voltage: 650V
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 11+ | 7.01 EUR |
| 16+ | 4.62 EUR |
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Technische Details NGTB35N65FL2WG ONSEMI
Description: IGBT TRENCH FS 650V 70A TO-247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 68 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 35A, Supplier Device Package: TO-247-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 72ns/132ns, Switching Energy: 840µJ (on), 280µJ (off), Test Condition: 400V, 35A, 10Ohm, 15V, Gate Charge: 125 nC, Part Status: Active, Current - Collector (Ic) (Max): 70 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 300 W.
Weitere Produktangebote NGTB35N65FL2WG nach Preis ab 4.61 EUR bis 9.86 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||
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NGTB35N65FL2WG | Hersteller : onsemi |
IGBTs 650V/35A FAST IGBT FSII T |
auf Bestellung 18 Stücke: Lieferzeit 10-14 Tag (e) |
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| NGTB35N65FL2WG | Hersteller : ON Semiconductor |
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auf Bestellung 2408 Stücke: Lieferzeit 21-28 Tag (e) |
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NGTB35N65FL2WG | Hersteller : onsemi |
Description: IGBT TRENCH FS 650V 70A TO-247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 68 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 35A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 72ns/132ns Switching Energy: 840µJ (on), 280µJ (off) Test Condition: 400V, 35A, 10Ohm, 15V Gate Charge: 125 nC Part Status: Active Current - Collector (Ic) (Max): 70 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 300 W |
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