Produkte > ONSEMI > NGTB40N60L2WG

NGTB40N60L2WG onsemi

Name: NGTB40N60L2WG
Brand: onsemi
SKU: 40210232-3
Price: 8.26 EUR
Availability: InStock

Hersteller: onsemi
Description: IGBT TRENCH/FS 600V 80A TO247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 73 ns
Vce(on) (Max) @ Vge, Ic: 2.61V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 98ns/213ns
Switching Energy: 1.17mJ (on), 280µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 228 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 417 W

auf Bestellung 2092 Stücke:

Lieferzeit 21-28 Tag (e)

Anzahl	Preis ohne MwSt
88+	8.26 EUR

Mindestbestellmenge: 88

Produktrezensionen

Produktbewertung abgeben

Technische Details NGTB40N60L2WG onsemi

Description: IGBT TRENCH/FS 600V 80A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 73 ns, Vce(on) (Max) @ Vge, Ic: 2.61V @ 15V, 40A, Supplier Device Package: TO-247-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 98ns/213ns, Switching Energy: 1.17mJ (on), 280µJ (off), Test Condition: 400V, 40A, 10Ohm, 15V, Gate Charge: 228 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 160 A, Power - Max: 417 W.

Weitere Produktangebote NGTB40N60L2WG

Bezeichnung	Hersteller	Beschreibung	Verfügbarkeit
NGTB40N60L2WG	Hersteller : ON Semiconductor	IGBT Transistors 600V/40A FAST IGBT FSII T	auf Bestellung 6 Stücke: Lieferzeit 14-28 Tag (e)
NGTB40N60L2WG	Hersteller : ON Semiconductor		auf Bestellung 3570 Stücke: Lieferzeit 21-28 Tag (e)
NGTB40N60L2WG	Hersteller : ONSEMI	Description: ONSEMI - NGTB40N60L2WG - 600V-40A FAST IGBT FSII T tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023)	auf Bestellung 2092 Stücke: Lieferzeit 14-21 Tag (e)
NGTB40N60L2WG	Hersteller : ON Semiconductor	Trans IGBT Chip N-CH 600V 80A 417000mW 3-Pin(3+Tab) TO-247 Tube	Produkt ist nicht verfügbar
NGTB40N60L2WG	Hersteller : onsemi	Description: IGBT TRENCH/FS 600V 80A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 73 ns Vce(on) (Max) @ Vge, Ic: 2.61V @ 15V, 40A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 98ns/213ns Switching Energy: 1.17mJ (on), 280µJ (off) Test Condition: 400V, 40A, 10Ohm, 15V Gate Charge: 228 nC Part Status: Obsolete Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 160 A Power - Max: 417 W	Produkt ist nicht verfügbar