auf Bestellung 295 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 8.04 EUR |
| 10+ | 5.79 EUR |
| 120+ | 5.23 EUR |
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Technische Details NGTB40N65FL2WG onsemi
Description: IGBT TRENCH FS 650V 80A TO-247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 72 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A, Supplier Device Package: TO-247-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 84ns/177ns, Switching Energy: 970µJ (on), 440µJ (off), Test Condition: 400V, 40A, 10Ohm, 15V, Gate Charge: 170 nC, Part Status: Active, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 160 A, Power - Max: 366 W.
Weitere Produktangebote NGTB40N65FL2WG nach Preis ab 6.35 EUR bis 11.02 EUR
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NGTB40N65FL2WG | Hersteller : onsemi |
 Description: IGBT TRENCH FS 650V 80A TO-247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 72 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 84ns/177ns Switching Energy: 970µJ (on), 440µJ (off) Test Condition: 400V, 40A, 10Ohm, 15V Gate Charge: 170 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 160 A Power - Max: 366 W |
auf Bestellung 30 Stücke: Lieferzeit 10-14 Tag (e) |
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NGTB40N65FL2WG | Hersteller : ON Semiconductor |
Trans IGBT Chip N-CH 650V 80A 36000mW 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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NGTB40N65FL2WG | Hersteller : ON Semiconductor |
Trans IGBT Chip N-CH 650V 80A 366W 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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| NGTB40N65FL2WG | Hersteller : ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 40A; 183W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 183W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 160A Mounting: THT Gate charge: 170nC Kind of package: tube |
Produkt ist nicht verfügbar |