NGTB40N65IHRWG ON Semiconductor
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Technische Details NGTB40N65IHRWG ON Semiconductor
Description: IGBT FIELD STOP 650V 80A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 40A, Supplier Device Package: TO-247-3, IGBT Type: Field Stop, Switching Energy: 420µJ (off), Test Condition: 400V, 40A, 10Ohm, 15V, Gate Charge: 190 nC, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 160 A, Power - Max: 405 W.
Weitere Produktangebote NGTB40N65IHRWG
| Foto | Bezeichnung | Hersteller | Beschreibung |
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NGTB40N65IHRWG | Hersteller : ON Semiconductor |
 Trans IGBT Chip N-CH 650V 80A 405000mW 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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NGTB40N65IHRWG | Hersteller : onsemi |
Description: IGBT FIELD STOP 650V 80A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 40A Supplier Device Package: TO-247-3 IGBT Type: Field Stop Switching Energy: 420µJ (off) Test Condition: 400V, 40A, 10Ohm, 15V Gate Charge: 190 nC Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 160 A Power - Max: 405 W |
Produkt ist nicht verfügbar |