NGTB40N65IHRWG ON Semiconductor

Description: IGBT FIELD STOP 650V 80A TO247, Power - Max: 405 W, Current - Collector Pulsed (Icm): 160 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector (Ic) (Max): 80 A, Gate Charge: 190 nC, Test Condition: 400V, 40A, 10Ohm, 15V, Switching Energy: 420µJ (off), IGBT Type: Field Stop, Supplier Device Package: TO-247-3, Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 40A, Input Type: Standard, Operating Temperature: -40°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.