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NGTB50N60FLWG

NGTB50N60FLWG ON Semiconductor


ngtb50n60flw-d.pdf Hersteller: ON Semiconductor
Trans IGBT Chip N-CH 600V 100A 223000mW 3-Pin(3+Tab) TO-247 Tube
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Technische Details NGTB50N60FLWG ON Semiconductor

Description: IGBT 600V 50A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 85 ns, Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A, Supplier Device Package: TO-247-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 116ns/292ns, Switching Energy: 1.1mJ (on), 600µJ (off), Test Condition: 400V, 50A, 10Ohm, 15V, Gate Charge: 310 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 100 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 200 A, Power - Max: 223 W.

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NGTB50N60FLWG NGTB50N60FLWG Hersteller : onsemi ngtb50n60flw-d.pdf Description: IGBT 600V 50A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 85 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 116ns/292ns
Switching Energy: 1.1mJ (on), 600µJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 310 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 223 W
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NGTB50N60FLWG NGTB50N60FLWG Hersteller : onsemi NGTB50N60FLW_D-2317780.pdf IGBT Transistors IGBT, 600 V, 50 A, FS1 Solar/UPS
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