Technische Details NGTB50N60L2WG ON Semiconductor
Description: IGBT TRENCH FS 600V 100A TO-247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 67 ns, Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A, Supplier Device Package: TO-247-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 110ns/270ns, Switching Energy: 800µJ (on), 600µJ (off), Test Condition: 400V, 50A, 10Ohm, 15V, Gate Charge: 310 nC, Current - Collector (Ic) (Max): 100 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 200 A, Power - Max: 500 W.
Weitere Produktangebote NGTB50N60L2WG
| Foto | Bezeichnung | Hersteller | Beschreibung |
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NGTB50N60L2WG | Hersteller : ON Semiconductor |
 Trans IGBT Chip N-CH 600V 100A 500000mW 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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NGTB50N60L2WG | Hersteller : onsemi |
Description: IGBT TRENCH FS 600V 100A TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 67 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 110ns/270ns Switching Energy: 800µJ (on), 600µJ (off) Test Condition: 400V, 50A, 10Ohm, 15V Gate Charge: 310 nC Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 200 A Power - Max: 500 W |
Produkt ist nicht verfügbar |