NGTB50N60L2WG ON Semiconductor

Description: IGBT TRENCH FS 600V 100A TO-247, Power - Max: 500 W, Current - Collector Pulsed (Icm): 200 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector (Ic) (Max): 100 A, Gate Charge: 310 nC, Test Condition: 400V, 50A, 10Ohm, 15V, Switching Energy: 800µJ (on), 600µJ (off), Td (on/off) @ 25°C: 110ns/270ns, IGBT Type: Trench Field Stop, Supplier Device Package: TO-247-3, Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A, Reverse Recovery Time (trr): 67 ns, Input Type: Standard, Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.