NGTB50N65FL2WAG
Produktcode: 154577
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Weitere Produktangebote NGTB50N65FL2WAG nach Preis ab 5.22 EUR bis 8.57 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||
|---|---|---|---|---|---|---|---|
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NGTB50N65FL2WAG | onsemi |
Description: IGBT FS 650V 160A TO-247-4L Power - Max: 417 W Current - Collector Pulsed (Icm): 160 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 160 A Gate Charge: 215 nC Test Condition: 400V, 50A, 10Ohm, 15V Switching Energy: 420µJ (on), 550µJ (off) Td (on/off) @ 25°C: 23ns/123ns IGBT Type: Field Stop Supplier Device Package: TO-247-4L Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A Reverse Recovery Time (trr): 94 ns Input Type: Standard Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-4 Packaging: Bulk |
auf Bestellung 3330 Stücke: Lieferzeit 10-14 Tag (e) |
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| NGTB50N65FL2WAG | ONSEMI |
Description: ONSEMI - NGTB50N65FL2WAG - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 3330 Stücke: Lieferzeit 14-21 Tag (e) |
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| NGTB50N65FL2WAG |
|
Hersteller: onsemi
Description: IGBT FS 650V 160A TO-247-4L
Power - Max: 417 W
Current - Collector Pulsed (Icm): 160 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 160 A
Gate Charge: 215 nC
Test Condition: 400V, 50A, 10Ohm, 15V
Switching Energy: 420µJ (on), 550µJ (off)
Td (on/off) @ 25°C: 23ns/123ns
IGBT Type: Field Stop
Supplier Device Package: TO-247-4L
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Reverse Recovery Time (trr): 94 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Bulk
Description: IGBT FS 650V 160A TO-247-4L
Power - Max: 417 W
Current - Collector Pulsed (Icm): 160 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 160 A
Gate Charge: 215 nC
Test Condition: 400V, 50A, 10Ohm, 15V
Switching Energy: 420µJ (on), 550µJ (off)
Td (on/off) @ 25°C: 23ns/123ns
IGBT Type: Field Stop
Supplier Device Package: TO-247-4L
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Reverse Recovery Time (trr): 94 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Bulk
auf Bestellung 3330 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 104+ | 5.22 EUR |
| NGTB50N65FL2WAG |
|
Hersteller: ONSEMI
Description: ONSEMI - NGTB50N65FL2WAG - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
Description: ONSEMI - NGTB50N65FL2WAG - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 3330 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 142+ | 8.57 EUR |