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NGTB50N65FL2WAG

NGTB50N65FL2WAG onsemi

ngtb50n65fl2wa-d.pdf Hersteller: onsemi
Description: IGBT FIELD STOP 650V 160A TO247
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 94 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: TO-247-4L
IGBT Type: Field Stop
Td (on/off) @ 25°C: 23ns/123ns
Switching Energy: 420µJ (on), 550µJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 215 nC
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 417 W
auf Bestellung 3330 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
118+6.12 EUR
Mindestbestellmenge: 118
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Technische Details NGTB50N65FL2WAG onsemi

Description: IGBT FIELD STOP 650V 160A TO247, Packaging: Bulk, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 94 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A, Supplier Device Package: TO-247-4L, IGBT Type: Field Stop, Td (on/off) @ 25°C: 23ns/123ns, Switching Energy: 420µJ (on), 550µJ (off), Test Condition: 400V, 50A, 10Ohm, 15V, Gate Charge: 215 nC, Current - Collector (Ic) (Max): 160 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 160 A, Power - Max: 417 W.

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NGTB50N65FL2WAG Hersteller : ONSEMI NGTB50N65FL2WA-D.PDF Description: ONSEMI - NGTB50N65FL2WAG - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 3330 Stücke:
Lieferzeit 14-21 Tag (e)
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NGTB50N65FL2WAG NGTB50N65FL2WAG Hersteller : onsemi ngtb50n65fl2wa-d.pdf Description: IGBT FIELD STOP 650V 160A TO247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 94 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: TO-247-4L
IGBT Type: Field Stop
Td (on/off) @ 25°C: 23ns/123ns
Switching Energy: 420µJ (on), 550µJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 215 nC
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 417 W
Produkt ist nicht verfügbar
NGTB50N65FL2WAG Hersteller : ON Semiconductor NGTB50N65FL2WA-D-1813163.pdf IGBT Transistors 650V/50 FAST IGBT FSII TO
Produkt ist nicht verfügbar