Produkte > ONSEMI > NGTB60N60SWG
NGTB60N60SWG

NGTB60N60SWG onsemi


ngtb60n60sw-d.pdf Hersteller: onsemi
Description: IGBT 600V 120A 298W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 76 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 87ns/180ns
Switching Energy: 1.41mJ (on), 600µJ (off)
Test Condition: 400V, 60A, 10Ohm, 15V
Gate Charge: 173 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 298 W
auf Bestellung 290 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
87+8.33 EUR
Mindestbestellmenge: 87
Produktrezensionen
Produktbewertung abgeben

Technische Details NGTB60N60SWG onsemi

Description: IGBT 600V 120A 298W TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 76 ns, Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A, Supplier Device Package: TO-247-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 87ns/180ns, Switching Energy: 1.41mJ (on), 600µJ (off), Test Condition: 400V, 60A, 10Ohm, 15V, Gate Charge: 173 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 120 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 240 A, Power - Max: 298 W.

Weitere Produktangebote NGTB60N60SWG

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
NGTB60N60SWG NGTB60N60SWG Hersteller : onsemi NGTB60N60SW_D-2317713.pdf IGBT Transistors 600V/60A IGBT LPT TO-247
auf Bestellung 184 Stücke:
Lieferzeit 14-28 Tag (e)
NGTB60N60SWG Hersteller : ONSEMI ONSM-S-A0013775419-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0 Description: ONSEMI - NGTB60N60SWG - 600V-60A IGBT LPT TO-247
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 290 Stücke:
Lieferzeit 14-21 Tag (e)
NGTB60N60SWG NGTB60N60SWG Hersteller : ON Semiconductor ngtb60n60sw-d.pdf Trans IGBT Chip N-CH 600V 120A 298000mW 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
NGTB60N60SWG NGTB60N60SWG Hersteller : onsemi ngtb60n60sw-d.pdf Description: IGBT 600V 120A 298W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 76 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 87ns/180ns
Switching Energy: 1.41mJ (on), 600µJ (off)
Test Condition: 400V, 60A, 10Ohm, 15V
Gate Charge: 173 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 298 W
Produkt ist nicht verfügbar