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NGTB75N60FL2WG

NGTB75N60FL2WG ON Semiconductor


ngtb75n60fl2w-d.pdf Hersteller: ON Semiconductor
Trans IGBT Chip N-CH 600V 100A 595000mW 3-Pin(3+Tab) TO-247 Tube
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Technische Details NGTB75N60FL2WG ON Semiconductor

Description: IGBT 600V 75A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 80 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A, Supplier Device Package: TO-247-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 110ns/270ns, Switching Energy: 1.5mJ (on), 1mJ (off), Test Condition: 400V, 75A, 10Ohm, 15V, Gate Charge: 310 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 100 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 200 A, Power - Max: 595 W.

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NGTB75N60FL2WG NGTB75N60FL2WG Hersteller : onsemi ngtb75n60fl2w-d.pdf Description: IGBT 600V 75A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 80 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 110ns/270ns
Switching Energy: 1.5mJ (on), 1mJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 310 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 595 W
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NGTB75N60FL2WG Hersteller : onsemi NGTB75N60FL2W_D-1813281.pdf IGBT Transistors IGBT, 600V 75A FS2 Solar/UPS
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