NGTB75N65FL2WAG ON Semiconductor
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Technische Details NGTB75N65FL2WAG ON Semiconductor
Description: IGBT FIELD STOP 650V 200A TO247, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 90 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A, Supplier Device Package: TO-247-4L, IGBT Type: Field Stop, Td (on/off) @ 25°C: 23ns/157ns, Switching Energy: 610µJ (on), 1.2mJ (off), Test Condition: 400V, 75A, 10Ohm, 15V, Gate Charge: 310 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 200 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 200 A, Power - Max: 536 W.
Weitere Produktangebote NGTB75N65FL2WAG
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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NGTB75N65FL2WAG | Hersteller : ON Semiconductor |
 Trans IGBT Chip N-CH 650V 200A 536000mW 4-Pin(4+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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NGTB75N65FL2WAG | Hersteller : onsemi |
Description: IGBT FIELD STOP 650V 200A TO247 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 90 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A Supplier Device Package: TO-247-4L IGBT Type: Field Stop Td (on/off) @ 25°C: 23ns/157ns Switching Energy: 610µJ (on), 1.2mJ (off) Test Condition: 400V, 75A, 10Ohm, 15V Gate Charge: 310 nC Part Status: Obsolete Current - Collector (Ic) (Max): 200 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 200 A Power - Max: 536 W |
Produkt ist nicht verfügbar |