Technische Details NGTG35N65FL2WG ON Semiconductor
Description: IGBT FIELD STOP 650V 70A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 35A, Supplier Device Package: TO-247-3, IGBT Type: Field Stop, Td (on/off) @ 25°C: 72ns/132ns, Switching Energy: 840µJ (on), 280µJ (off), Test Condition: 400V, 35A, 10Ohm, 15V, Gate Charge: 125 nC, Current - Collector (Ic) (Max): 70 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 300 W.
Weitere Produktangebote NGTG35N65FL2WG
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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| NGTG35N65FL2WG | Hersteller : ON Semiconductor |
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auf Bestellung 20 Stücke: Lieferzeit 21-28 Tag (e) |
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NGTG35N65FL2WG | Hersteller : onsemi |
Description: IGBT FIELD STOP 650V 70A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 35A Supplier Device Package: TO-247-3 IGBT Type: Field Stop Td (on/off) @ 25°C: 72ns/132ns Switching Energy: 840µJ (on), 280µJ (off) Test Condition: 400V, 35A, 10Ohm, 15V Gate Charge: 125 nC Current - Collector (Ic) (Max): 70 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 300 W |
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