NGW30T60M3DFQ Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: 600V IGBT DISCRETE
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 110 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A
Supplier Device Package: TO-247-3L
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 60ns/180ns
Switching Energy: 700µJ (on), 400µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 130 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 285 W
auf Bestellung 239 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 5.98 EUR |
| 30+ | 4.74 EUR |
| 120+ | 4.07 EUR |
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Technische Details NGW30T60M3DFQ Nexperia USA Inc.
Description: 600V IGBT DISCRETE, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 110 ns, Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A, Supplier Device Package: TO-247-3L, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 60ns/180ns, Switching Energy: 700µJ (on), 400µJ (off), Test Condition: 400V, 30A, 10Ohm, 15V, Gate Charge: 130 nC, Current - Collector (Ic) (Max): 75 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 90 A, Power - Max: 285 W.
Weitere Produktangebote NGW30T60M3DFQ nach Preis ab 3.04 EUR bis 6.09 EUR
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NGW30T60M3DFQ | Hersteller : Nexperia |
IGBT Transistors IGBT TRANSISTOR |
auf Bestellung 232 Stücke: Lieferzeit 10-14 Tag (e) |
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NGW30T60M3DFQ | Hersteller : NEXPERIA |
Description: NEXPERIA - NGW30T60M3DFQ - IGBT, 75 A, 1.4 V, 285 W, 600 V, TO-247, 3 Pin(s) tariffCode: 85412900 Transistormontage: Durchsteckmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.4V usEccn: EAR99 euEccn: NLR Verlustleistung: 285W Bauform - Transistor: TO-247 Anzahl der Pins: 3Pin(s) Produktpalette: Field Stop Trench Series Kollektor-Emitter-Spannung, max.: 600V productTraceability: No Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 75A SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 120 Stücke: Lieferzeit 14-21 Tag (e) |
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| NGW30T60M3DFQ | Hersteller : NEXPERIA |
Trans IGBT Chip N-CH 600V 75A 285W |
Produkt ist nicht verfügbar |
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| NGW30T60M3DFQ | Hersteller : NEXPERIA |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 45A; 142W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 45A Power dissipation: 142W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 90A Mounting: THT Gate charge: 130nC Kind of package: tube Turn-on time: 105ns Turn-off time: 270ns Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| NGW30T60M3DFQ | Hersteller : NEXPERIA |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 45A; 142W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 45A Power dissipation: 142W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 90A Mounting: THT Gate charge: 130nC Kind of package: tube Turn-on time: 105ns Turn-off time: 270ns Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |