NGW30T65M3DFPQ Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: NGW30T65M3DFP/SOT429-2/TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 105 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: TO-247-3L
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 16ns/137ns
Switching Energy: 790µJ (on), 420µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 89 nC
Current - Collector (Ic) (Max): 57 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 199 W
auf Bestellung 240 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 5.86 EUR |
| 10+ | 3.85 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NGW30T65M3DFPQ Nexperia USA Inc.
Description: NGW30T65M3DFP/SOT429-2/TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 105 ns, Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A, Supplier Device Package: TO-247-3L, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 16ns/137ns, Switching Energy: 790µJ (on), 420µJ (off), Test Condition: 400V, 30A, 10Ohm, 15V, Gate Charge: 89 nC, Current - Collector (Ic) (Max): 57 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 90 A, Power - Max: 199 W.
Weitere Produktangebote NGW30T65M3DFPQ nach Preis ab 2.06 EUR bis 6 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
NGW30T65M3DFPQ | Hersteller : Nexperia |
IGBTs 650 V, 30 A trench field-stop IGBT with full rated silicon diode |
auf Bestellung 250 Stücke: Lieferzeit 10-14 Tag (e) |
|