NGW50T65M3DFPQ Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: NGW50T65M3DFP/SOT429-2/TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 94 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
Supplier Device Package: TO-247-3L
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 29ns/223ns
Switching Energy: 1.52mJ (on), 770µJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 166 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 368 W
auf Bestellung 250 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 8.52 EUR |
| 10+ | 5.7 EUR |
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Technische Details NGW50T65M3DFPQ Nexperia USA Inc.
Description: NGW50T65M3DFP/SOT429-2/TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 94 ns, Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A, Supplier Device Package: TO-247-3L, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 29ns/223ns, Switching Energy: 1.52mJ (on), 770µJ (off), Test Condition: 400V, 50A, 10Ohm, 15V, Gate Charge: 166 nC, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 150 A, Power - Max: 368 W.
Weitere Produktangebote NGW50T65M3DFPQ nach Preis ab 3.45 EUR bis 8.64 EUR
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NGW50T65M3DFPQ | Hersteller : Nexperia |
IGBTs NGW50T65M3DFP/SOT429-2/TO247-3 |
auf Bestellung 250 Stücke: Lieferzeit 10-14 Tag (e) |
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