NGW60T65M3DFPQ Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: NGW60T65M3DFP/SOT429-2/TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 102 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 60A
Supplier Device Package: TO-247-3L
IGBT Type: Trench Field Stop
Test Condition: 400V, 60A, 10Ohm, 15V
Gate Charge: 217 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 431 W
Td (on/off) @ 25°C: 36ns/270ns
Switching Energy: 1.91mJ (on), 930µJ (off)
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Technische Details NGW60T65M3DFPQ Nexperia USA Inc.
Description: NGW60T65M3DFP/SOT429-2/TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 102 ns, Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 60A, Supplier Device Package: TO-247-3L, IGBT Type: Trench Field Stop, Test Condition: 400V, 60A, 10Ohm, 15V, Gate Charge: 217 nC, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 180 A, Power - Max: 431 W, Td (on/off) @ 25°C: 36ns/270ns, Switching Energy: 1.91mJ (on), 930µJ (off).
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NGW60T65M3DFPQ | Hersteller : Nexperia |
650 V, 50 A trench field-stop IGBT with full rated silicon diode |
Produkt ist nicht verfügbar |