NHDTA123JTR Nexperia
auf Bestellung 39000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 39000+ | 0.027 EUR |
Produktrezensionen
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Technische Details NHDTA123JTR Nexperia
Description: TRANS PREBIAS PNP 80V TO236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 100nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V, Supplier Device Package: TO-236AB, Grade: Automotive, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 80 V, Power - Max: 250 mW, Frequency - Transition: 150 MHz, Resistor - Base (R1): 2.2 kOhms, Resistor - Emitter Base (R2): 47 kOhms, Qualification: AEC-Q101, Resistors Included: R1 and R2.
Weitere Produktangebote NHDTA123JTR nach Preis ab 0.035 EUR bis 0.32 EUR
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NHDTA123JTR | Hersteller : Nexperia USA Inc. |
 Description: TRANS PREBIAS PNP 80V TO236ABPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Supplier Device Package: TO-236AB Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 250 mW Frequency - Transition: 150 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
auf Bestellung 21000 Stücke: Lieferzeit 10-14 Tag (e) |
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NHDTA123JTR | Hersteller : Nexperia |
Digital Transistors NHDTA123JT/SOT23/TO-236AB |
auf Bestellung 5883 Stücke: Lieferzeit 10-14 Tag (e) |
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NHDTA123JTR | Hersteller : Nexperia USA Inc. |
Description: TRANS PREBIAS PNP 80V TO236AB Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Supplier Device Package: TO-236AB Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 250 mW Frequency - Transition: 150 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms Grade: Automotive Qualification: AEC-Q101 Resistors Included: R1 and R2 |
auf Bestellung 26390 Stücke: Lieferzeit 10-14 Tag (e) |
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| NHDTA123JTR | Hersteller : NEXPERIA |
Trans Digital BJT PNP 80V 100mA 350mW Automotive 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |