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NHDTA123JTR

NHDTA123JTR Nexperia USA Inc.


NHDTA123JT_143ZT_114YT_SER.pdf
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 80V TO236AB
Resistors Included: R1 and R2
Qualification: AEC-Q101
Grade: Automotive
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 2.2 kOhms
Part Status: Active
Supplier Device Package: TO-236AB
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Frequency - Transition: 150 MHz
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 100 mA
auf Bestellung 21000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.061 EUR
6000+0.055 EUR
9000+0.051 EUR
15000+0.048 EUR
21000+0.045 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details NHDTA123JTR Nexperia USA Inc.

Description: TRANS PREBIAS PNP 80V TO236AB, Resistors Included: R1 and R2, Qualification: AEC-Q101, Grade: Automotive, Resistor - Emitter Base (R2): 47 kOhms, Resistor - Base (R1): 2.2 kOhms, Part Status: Active, Supplier Device Package: TO-236AB, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V, Current - Collector Cutoff (Max): 100nA, Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA, Transistor Type: PNP - Pre-Biased, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR), Frequency - Transition: 150 MHz, Power - Max: 250 mW, Voltage - Collector Emitter Breakdown (Max): 80 V, Current - Collector (Ic) (Max): 100 mA.

Weitere Produktangebote NHDTA123JTR nach Preis ab 0.065 EUR bis 0.38 EUR

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NHDTA123JTR NHDTA123JTR Hersteller : Nexperia USA Inc. NHDTA123JT_143ZT_114YT_SER.pdf Description: TRANS PREBIAS PNP 80V TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 250 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 26390 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
56+0.32 EUR
95+0.19 EUR
152+0.12 EUR
500+0.085 EUR
1000+0.074 EUR
Mindestbestellmenge: 56
Im Einkaufswagen  Stück im Wert von  UAH
NHDTA123JTR NHDTA123JTR Hersteller : Nexperia NHDTA123JT_143ZT_114YT_SER.pdf Digital Transistors SOT23 80V PNP RET BJT
auf Bestellung 8078 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+0.38 EUR
13+0.23 EUR
50+0.16 EUR
100+0.14 EUR
1000+0.099 EUR
3000+0.072 EUR
6000+0.065 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH